PART |
Description |
Maker |
SID1050CM SID1050M |
Infrared LED Lamp 5PHI ROUND INFRARED LED (DIRECT MOUNT)
|
Sanken electric
|
IR17-21C-TR8 IR17-21C_TR8 IR17-21C/TR8 |
1.4 mm, 1 ELEMENT, INFRARED LED, 940 nm Infrared Chip LED
|
EVERLIGHT ELECTRONICS CO LTD Everlight Electronics Co., Ltd
|
TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极 PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp. Kingbright Corporation
|
LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm 3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics MARKTECH[Marktech Corporate]
|
TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
BIR-BO731 BIR-NL7C1 BIR-BM734 BIR-BL734 |
3 mm, 1 ELEMENT, INFRARED LED, 840 nm 5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|
BIR-BO13E4G-2 BIR-BO13V4V-2 BIR-BN03V4V-2 BIR-BO03 |
5 mm, 1 ELEMENT, INFRARED LED, 850 nm 4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm 4.98 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|
FRS5XX |
850nm & 940nm Infrared LED Module Each LED watts: 0.06W
|
OptoSupply International
|